BUKA datasheet, BUKA circuit, BUKA data sheet: PHILIPS – PowerMOS transistor,alldatasheet, datasheet, Datasheet search site for. MAX. MAX. UNIT field effect power transistor in a plastic envelope. BUK . This data sheet contains target or goal specifications for product development. Philips Semiconductors Product Specification PowerMOS transistor BUKA /B GENERAL DESCRIPTION N-channel enhancement mode field-effect power.

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Exposure to limiting values for extended periods may affect device reliability. Normalised drain-source on-state resistance. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

IRFZ40 |

These products are not designed for use in life support appliances, devices or systems where malfunction of these. Typical capacitances, Ciss, Coss, Crss. Reproduction in whole or in part is prohibited without the prior written consent of the. This data sheet contains target or goal specifications for product development. The information presented in this document does not form part of any quotation or contract, it is believed to be. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

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Normalised continuous drain current. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. TOAB; pin 2 connected to mounting base.

Typical reverse diode current. Application information Where application information is given, it is advisory and does not form part of the specification. Observe the general handling precautions for electrostatic-discharge datassheet devices ESDs to prevent damage to MOS gate oxide. Where application information is given, it is advisory and does not form part of the specification.

BUK456-60A Datasheet

April 6 Rev 1. Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond bjk456-60a MIN. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Stress above one or more of the datashet values may cause permanent damage to the device. April 7 Rev 1.

BUKA Datasheet(PDF) – NXP Semiconductors

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use datashret sale. Typical turn-on gate-charge characteristics. These are stress ratings only and. Application information Where application information is given, it is advisory and does not form part of the specification.

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No liability will be accepted by the publisher for any. No liability will be accepted by the publisher for any consequence of its use. All rights are reserved. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. No liability will be accepted by the publisher for any consequence of its use.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. C April 2 Rev 1.

This data sheet contains final product specifications. Philips customers using or selling these products. This data sheet contains final product specifications. Exposure to limiting values for extended periods may affect device reliability. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains target or goal specifications for product development.